发明授权
- 专利标题： Nonvolatile semiconductor memory and manufacturing method thereof
- 专利标题（中）： 非易失性半导体存储器及其制造方法
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申请号： US10178263申请日： 2002-06-25
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公开(公告)号： US06891246B2公开(公告)日： 2005-05-10
- 发明人: Seiichi Aritome
- 申请人： Seiichi Aritome
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-193518 20010626
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/76 ; H01L21/762 ; H01L21/8247 ; H01L23/52 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/00
摘要：
A nonvolatile semiconductor memory includes a trench isolation provided in a semiconductor substrate and an interlayer insulator provided on the semiconductor substrate. The trench isolation defines an active area extending in a first direction at the semiconductor substrate. The interlayer insulator has a wiring trench extending in a second direction intersecting the first direction. A first conductive material layer is provided at the cross-point of the active area and the wiring trench so that it is insulated from the active area. A second conductive material layer is provided in the wiring trench so that it is insulated from the first conductive material layer. A metal layer is provided in the wiring trench so that it is electrically in contact the second conductive material layer.
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