发明授权
US06891598B2 Lithographic device and method for wafer alignment with reduced tilt sensitivity
失效
用于晶片对准的平版印刷设备和方法,具有降低的倾斜灵敏度
- 专利标题: Lithographic device and method for wafer alignment with reduced tilt sensitivity
- 专利标题(中): 用于晶片对准的平版印刷设备和方法,具有降低的倾斜灵敏度
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申请号: US10776640申请日: 2004-02-12
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公开(公告)号: US06891598B2公开(公告)日: 2005-05-10
- 发明人: Gerbrand Van Der Zouw
- 申请人: Gerbrand Van Der Zouw
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop LLP
- 优先权: EP03075431 20030214
- 主分类号: G03F9/00
- IPC分类号: G03F9/00 ; H01L21/027 ; G03B27/54 ; G03B27/42
摘要:
A wafer or substrate alignment system for a lithographic apparatus, capable of exhibiting reduced tilt sensitivity, is presented herein. In particular, the substrate alignment system detects a position of a substrate relative to a position of a patterning device and includes a source configured to generate an incoming optical beam, at least one grating, provided on the substrate, having a diffracting length, in which the at least one grating is configured to generate at least one diffraction order of constituent diffracted beams based on an interaction with the incoming optical beam over the diffracting length. The system further includes an optical device, configured to image the at least one diffracted order on a sensor device, and includes aperture at a predetermined location to allow the constituent diffracted beams to pass through. The optical device is arranged to broaden the constituent diffracted beams such that a beam diameter of the constituent diffracted beams is larger than a diameter of the aperture, in order to reduce the sensitivity to tilt.
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