发明授权
- 专利标题： CuS formation by anodic sulfide passivation of copper surface
- 专利标题（中）： 通过铜表面的阳极硫化物钝化形成CuS
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申请号： US10885944申请日： 2004-07-07
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公开(公告)号： US06893895B1公开(公告)日： 2005-05-17
- 发明人: Uzodinma Okoroanyanwu , Sergey D. Lopatin , Matthew S. Buynoski
- 申请人： Uzodinma Okoroanyanwu , Sergey D. Lopatin , Matthew S. Buynoski
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Amin & Turocy, LLP
- 主分类号： C25D9/06
- IPC分类号： C25D9/06 ; C25D11/34 ; H01L51/40
摘要：
Disclosed are methods of making memory cells and semiconductor devices containing the memory cells. The methods involve passivating a portion of a copper containing electrode to form a copper sulfide layer in an electrochemical cell by applying a current through a passivation solution containing a sulfide compound. Such devices containing the memory cells are characterized by light weight and robust reliability.