发明授权
- 专利标题： Method and structure for improving the linearity of MOS switches
- 专利标题（中）： 提高MOS开关线性度的方法和结构
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申请号： US10436769申请日： 2003-05-13
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公开(公告)号： US06897701B2公开(公告)日： 2005-05-24
- 发明人: Feng Chen , Donald C. Richardson , Christopher L. Betty
- 申请人： Feng Chen , Donald C. Richardson , Christopher L. Betty
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Frederick J. Telecky, Jr.; W. James Brady, III
- 主分类号： G05F3/26
- IPC分类号： G05F3/26 ; H03K17/06 ; H03L5/00
摘要：
A technique is provided to linearize a MOS switch on-resistance and the nonlinear junction capacitance. The technique linearizes the sampling switch by using a buffer having substantially unity gain with proper DC shift to drive an isolated bulk terminal of the MOS well to improve the spurious free dynamic range (SFDR). In this way, the 2nd-order effect such as nonlinear body effect (VT(VSB)) and nonlinear junction capacitance (Cj(VSB)) can be substantially removed.
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