Invention Grant
- Patent Title: System for improving thermal stability of copper damascene structure
- Patent Title (中): 提高铜镶嵌结构热稳定性的系统
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Application No.: US10114778Application Date: 2002-04-03
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Publication No.: US06903000B2Publication Date: 2005-06-07
- Inventor: Jiong-Ping Lu , Qi-Zhong Hong , Tz-Cheng Chiu , Changming Jin , David Permana , Ting Tsui
- Applicant: Jiong-Ping Lu , Qi-Zhong Hong , Tz-Cheng Chiu , Changming Jin , David Permana , Ting Tsui
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/4763
Abstract:
Disclosed is a system for fabricating a semiconductor device (100). An interconnect structure (110) is formed on the semiconductor device (100) and a cap (112) is deposited over the interconnect structure (110). The interconnect structure (110) is annealed with the overlying cap (112) in place. The cap (112) is then removed after the interconnect structure (110) is annealed.
Public/Granted literature
- US20030124828A1 System for improving thermal stability of copper damascene structure Public/Granted day:2003-07-03
Information query
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