发明授权
US06904575B2 Method for improving chip yields in the presence of via flaring
失效
在存在通孔燃烧的情况下提高芯片产量的方法
- 专利标题: Method for improving chip yields in the presence of via flaring
- 专利标题(中): 在存在通孔燃烧的情况下提高芯片产量的方法
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申请号: US10064098申请日: 2002-06-11
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公开(公告)号: US06904575B2公开(公告)日: 2005-06-07
- 发明人: Robert J. Allen , Gustavo E. Tellez
- 申请人: Robert J. Allen , Gustavo E. Tellez
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: McGinn & Gibb, PLLC
- 代理商 Richard M. Kotulak, Esq.
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
The current invention provides a modification procedure that reduces errors in integrated circuits due to via shorts while at the same time avoiding the unnesting of the layout design and thereby permitting verification of the layout design by LVS testing tools. The current invention identifies if potentially shorting vias have electrically redundant paths and, if so, creates cloned cells of the original cell but void of the potentially shorting vias. The cloned cell is electrically comparable to the original cell. In addition, each instantiation of the original cell in the shapes data base is replaced with the cloned cell when electrical redundancy is present. Also, the number of vias removed can be minimized or maximized while, at the same time, all via electrical shorts are removed, depending on the design requirements.
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