Invention Grant
- Patent Title: Method of hardening a nano-imprinting stamp
- Patent Title (中): 硬化纳米压印印模的方法
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Application No.: US10279407Application Date: 2002-10-24
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Publication No.: US06916511B2Publication Date: 2005-07-12
- Inventor: Heon Lee , Gun-Young Jung
- Applicant: Heon Lee , Gun-Young Jung
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agent Trueman H. Denny, III
- Main IPC: B82B3/00
- IPC: B82B3/00 ; B81C1/00 ; G03F7/00 ; H01L21/027 ; H05H1/24

Abstract:
A method of forming a hardened nano-imprinting stamp is disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride.
Public/Granted literature
- US20040081798A1 Hardened nano-imprinting stamp Public/Granted day:2004-04-29
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