发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09799373申请日： 2001-03-05
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公开(公告)号： US06916693B2公开(公告)日： 2005-07-12
- 发明人: Hideto Ohnuma , Chiho Kokubo , Koichiro Tanaka , Naoki Makita , Shuhei Tsuchimoto
- 申请人： Hideto Ohnuma , Chiho Kokubo , Koichiro Tanaka , Naoki Makita , Shuhei Tsuchimoto
- 申请人地址： JP JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址： JP JP
- 代理机构： Cook, Alex, McFarron, Manzo, Cummings & Mehler, Ltd.
- 优先权： JP2000-062955 20000308; JP2000-062981 20000308
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/04 ; H01L21/00
摘要：
In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.
公开/授权文献
- US20010021544A1 Semiconductor device and manufacturing method thereof 公开/授权日：2001-09-13
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