发明授权
- 专利标题： Salicide formation method
- 专利标题（中）： 自杀剂形成方法
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申请号： US10409516申请日： 2003-04-08
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公开(公告)号： US06916729B2公开(公告)日： 2005-07-12
- 发明人: Sunfei Fang , Keith Kwong Hon Wong , Paul D. Agnello , Christian Lavoie , Lawrence A. Clevenger , Chester T. Dziobkowski , Richard J. Murphy , Patrick W. DeHaven , Nivo Rovedo , Hsiang-Jen Huang
- 申请人： Sunfei Fang , Keith Kwong Hon Wong , Paul D. Agnello , Christian Lavoie , Lawrence A. Clevenger , Chester T. Dziobkowski , Richard J. Murphy , Patrick W. DeHaven , Nivo Rovedo , Hsiang-Jen Huang
- 申请人地址： DE Munich US NY Armonk
- 专利权人： Infineon Technologies AG,International Business Machines Corporation
- 当前专利权人： Infineon Technologies AG,International Business Machines Corporation
- 当前专利权人地址： DE Munich US NY Armonk
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/283 ; H01L21/285 ; H01L21/3205 ; H01L21/321 ; H01L21/336 ; H01L21/44 ; H01L21/4763 ; H01L21/8238 ; H01L27/092 ; H01L29/78
摘要：
A method of forming a salicide on a semiconductor device includes depositing a first refractory metal layer over a silicon region of a substrate, depositing a near-noble metal layer over the first refractory metal layer, and depositing a second refractory metal layer over the near-noble metal layer. The semiconductor device is annealed in a first annealing process to form a silicide layer abutting the doped region of the semiconductor device. Un-reacted portions of the near-noble metal layer and the second refractory metal layer are removed. The device may be annealed in an optional second annealing process to convert the silicide layer to a low resistance phase silicide material. Junction leakage and bridging are minimized or eliminated by embodiments of the present invention, and a smoother silicided surface is achieved.
公开/授权文献
- US20040203229A1 Salicide formation method 公开/授权日：2004-10-14