发明授权
- 专利标题： Gate dielectric and method
- 专利标题（中）： 栅极电介质和方法
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申请号： US10210421申请日： 2002-07-31
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公开(公告)号： US06919251B2公开(公告)日： 2005-07-19
- 发明人: Antonio L. P. Rotondaro , Luigi Colombo , Malcolm J. Bevan
- 申请人： Antonio L. P. Rotondaro , Luigi Colombo , Malcolm J. Bevan
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Carlton H. Hoel; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8234 ; H01L21/8238 ; H01L27/088 ; H01L29/78 ; H01L21/31 ; H01L21/336
摘要：
CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface.
公开/授权文献
- US20040023462A1 Gate dielectric and method 公开/授权日：2004-02-05
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