发明授权
- 专利标题： Magneto-resistive memory cell structures with improved selectivity
- 专利标题（中）： 具有改善选择性的磁阻存储单元结构
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申请号： US10804584申请日： 2004-03-16
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公开(公告)号： US06920064B2公开(公告)日： 2005-07-19
- 发明人: Theodore Zhu , Yong Lu , Anthony Arrott
- 申请人： Theodore Zhu , Yong Lu , Anthony Arrott
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/15 ; G11C11/14
摘要：
A magneto-resistive memory comprises magneto-resistive memory cells comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.
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