发明授权
- 专利标题： Front side seal to prevent germanium outgassing
- 专利标题（中）： 前侧密封防止锗脱气
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申请号： US10620194申请日： 2003-07-15
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公开(公告)号： US06921709B1公开(公告)日： 2005-07-26
- 发明人: Eric N. Paton , Haihong Wang , Qi Xiang
- 申请人： Eric N. Paton , Haihong Wang , Qi Xiang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Foley & Lardner LLP
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/336 ; H01L21/84 ; H01L29/10
摘要：
A method of manufacturing an integrated circuit having a gate structure above a substrate that includes germanium utilizes at least one layer as a seal. The layer advantageously can prevent back sputtering and outdiffusion. A transistor can be formed in the substrate by doping through the layer. Another layer can be provided below the first layer. Layers of silicon dioxide, silicon carbide, silicon nitride, titanium, titanium nitride, titanium/titanium nitride, tantalum nitride, and silicon carbide can be used.
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