发明授权
- 专利标题： Underlayer compositions for multilayer lithographic processes
- 专利标题（中）： 用于多层光刻工艺的底层组合物
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申请号： US10920762申请日： 2004-08-18
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公开(公告)号： US06927015B2公开(公告)日： 2005-08-09
- 发明人: Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
- 申请人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Steven Capella
- 主分类号： C08F30/08
- IPC分类号： C08F30/08 ; C08F32/00 ; C08F230/08 ; C08K5/41 ; C08K5/54 ; C08L43/04 ; C08L45/00 ; G03F7/004 ; G03F7/038 ; G03F7/039 ; G03F7/075 ; G03F7/09 ; G11B5/31 ; H01L21/027 ; G03F7/40 ; G03F7/11
摘要：
Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.