Invention Grant
- Patent Title: CMOS imager and method of formation
- Patent Title (中): CMOS成像器和形成方法
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Application No.: US10345138Application Date: 2003-01-16
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Publication No.: US06927089B2Publication Date: 2005-08-09
- Inventor: Howard E. Rhodes
- Applicant: Howard E. Rhodes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro Morin & Oshinsky LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/00
Abstract:
A CMOS imager having multiple graded doped regions formed below respective pixel sensor cells is disclosed. A deep retrograde p-well is formed under a red pixel sensor cell of a semiconductor substrate to increase the red response. A shallow p-well is formed under the blue pixel sensor cell to decrease the red and green responses, while a shallow retrograde p-well is formed below the green pixel sensor cell to increase the green response and decrease the red response.
Public/Granted literature
- US20030136982A1 CMOS imager and method of formation Public/Granted day:2003-07-24
Information query
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