发明授权
- 专利标题: Method of reducing pattern distortions during imprint lithography processes
- 专利标题(中): 在压印光刻过程中减少图案失真的方法
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申请号: US10293223申请日: 2002-11-13
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公开(公告)号: US06929762B2公开(公告)日: 2005-08-16
- 发明人: Daniel I. Rubin
- 申请人: Daniel I. Rubin
- 申请人地址: US TX Austin
- 专利权人: Molecular Imprints, Inc.
- 当前专利权人: Molecular Imprints, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Kenneth C. Brooks
- 主分类号: B29C59/00
- IPC分类号: B29C59/00 ; B29C59/02 ; G03F7/00 ; B29C33/40 ; B29C35/08 ; B29C43/02
摘要:
The present invention is directed to a method of reducing distortions in a pattern disposed on a layer of a substrate, defining a recorded pattern, employing a mold having the pattern recorded therein, defining an original pattern. The method includes, defining a region on the layer in which to produce the recorded pattern. Relative extenuative variations between the substrate and the mold are created to ensure that the original pattern defines an area coextensive with the region. Thereafter, the recorded pattern is formed in the region. The relative extenuative variations are created by heating or cooling of the substrate so that the region defines an area that is slightly smaller/larger than the area of the original pattern. Then compression/tensile forces are applied to the mold to provide the recorded pattern with an area coextensive with the area of the region.
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