A ferroelectric semiconductor memory includes an arrangement of memory units comprising at least one row of memory units. The memory units of the at least one row are associated with a respective word line of the arrangement. The arrangement of memory unit includes a plurality of local word lines branching off from the word line associated with the at least one row, each local word line being connected to a respective group of memory units of the line. Selective connection means allow to selectively connect one of the local word lines to the respective word line. The arrangement of memory units further includes a plurality of local plate biasing lines, each one associated with the memory units of a respective group of memory units, for selectively driving the memory units of the respective groups.