发明授权
- 专利标题: Radiation source, lithographic apparatus, and device manufacturing method
- 专利标题(中): 辐射源,光刻设备和器件制造方法
-
申请号: US10673644申请日: 2003-09-30
-
公开(公告)号: US06933510B2公开(公告)日: 2005-08-23
- 发明人: Givi Georgievitch Zukavishvili , Vladimir Vital'Evitch Ivanov , Konstantin Nikolaevitch Koshelev , Evgenil Dmitreevitch Korob , Vadim Yevgenyevich Banine , Pavel Stanislavovich Antsiferov
- 申请人: Givi Georgievitch Zukavishvili , Vladimir Vital'Evitch Ivanov , Konstantin Nikolaevitch Koshelev , Evgenil Dmitreevitch Korob , Vadim Yevgenyevich Banine , Pavel Stanislavovich Antsiferov
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 优先权: EP02256907 20021003
- 主分类号: G21K5/00
- IPC分类号: G21K5/00 ; F28D15/02 ; G03F7/20 ; G21K5/02 ; G21K5/08 ; H01L21/027 ; H05G2/00 ; H05H1/24 ; A61N5/00 ; G21G4/00 ; H01J61/04
摘要:
A radiation source unit is provided that includes an anode and a cathode that are configured and arranged to create a discharge in a substance in a space between said anode and cathode and to form a plasma so as to generate electromagnetic radiation. The substance may comprise xenon, indium, lithium, tin or any suitable material. To improve conversion efficiency, the source unit may be constructed to have a low inductance, and operated with a minimum of plasma. To, for example, improve heat dissipation, a fluid circulation system can be created within the source volume and a wick by using a fluid in both its vapor and liquid states. To, for example, prevent contamination from entering a lithographic projection apparatus, the source unit can be constructed to minimize the production of contamination, and a trap can be employed to capture the contamination without interfering with the emitted radiation.
公开/授权文献
信息查询