发明授权
- 专利标题: Bist for parallel testing of on chip memory
- 专利标题(中): 双绞线用于片上存储器的并行测试
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申请号: US10363189申请日: 2000-09-06
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公开(公告)号: US06934205B1公开(公告)日: 2005-08-23
- 发明人: Pramod Pandey , Ali Najafi
- 申请人: Pramod Pandey , Ali Najafi
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies Aktiengesellschaft
- 当前专利权人: Infineon Technologies Aktiengesellschaft
- 当前专利权人地址: DE Munich
- 代理机构: Horizon IP Pte Ltd
- 国际申请: PCT/SG00/00132 WO 20000906
- 国际公布: WO02/21234 WO 20020314
- 主分类号: G06F11/27
- IPC分类号: G06F11/27 ; G11C7/00
摘要:
A processor assisted memory BIST to identify detective memory addresses. The processor generates the address to be tested and the BIST generates the test data used to test the memory. Data is written to an read from memory. The read data is compared with the test data. If a mismatch occurs, the BIST generates an interrupt to identify the processor. Since the processor generated the address, the defective memory address is identified. The defective memory address can subsequently be replaced with redundant memory cells.
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