发明授权
US06940149B1 Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base
失效
形成在发射极和非本征基底之间具有空隙的双极晶体管的结构和方法
- 专利标题： Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base
- 专利标题（中）： 形成在发射极和非本征基底之间具有空隙的双极晶体管的结构和方法
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申请号： US10708563申请日： 2004-03-11
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公开(公告)号： US06940149B1公开(公告)日： 2005-09-06
- 发明人: Rama Divakaruni , Gregory Freeman , Marwan Khater , William Tonti
- 申请人： Rama Divakaruni , Gregory Freeman , Marwan Khater , William Tonti
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Daryl K. Neff; H. Daniel Schnurmann
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L27/06 ; H01L27/082 ; H01L29/06 ; H01L29/737 ; H01L31/072
摘要：
Structure and a method are provided for making a bipolar transistor, the bipolar transistor including a collector, an intrinsic base overlying the collector, an emitter overlying the intrinsic base, and an extrinsic base spaced from the emitter by a gap, the gap including at least one of an air gap and a vacuum void.
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