发明授权
US06940778B2 System and method for reducing leakage in memory cells using wordline control
有权
使用字线控制减少存储单元泄漏的系统和方法
- 专利标题： System and method for reducing leakage in memory cells using wordline control
- 专利标题（中）： 使用字线控制减少存储单元泄漏的系统和方法
-
申请号： US10697679申请日： 2003-10-29
-
公开(公告)号： US06940778B2公开(公告)日： 2005-09-06
- 发明人: Todd W. Mellinger , J. Michael Hill , Jonathan E. Lachman
- 申请人： Todd W. Mellinger , J. Michael Hill , Jonathan E. Lachman
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 代理商 John Pessetto
- 主分类号： G11C5/14
- IPC分类号： G11C5/14 ; G11C7/00 ; G11C11/00
摘要：
An embodiment of the invention provides a circuit for reducing power in memory cells. The input of the circuit is connected to the wordline of the memory cells. When the wordline is active, the output of the circuit applies a voltage near VDD to the positive voltage supply node of the memory cells. When the wordline is inactive, the output of the circuit applies a voltage that is reduced by at least one Vt from VDD to the positive voltage supply node of the memory cells.
公开/授权文献
信息查询
