Invention Grant
- Patent Title: Semiconductor manufacturing apparatus
- Patent Title (中): 半导体制造装置
-
Application No.: US10625887Application Date: 2003-07-23
-
Publication No.: US06941186B2Publication Date: 2005-09-06
- Inventor: Hidemitsu Naya , Koji Hashimoto , Masamichi Kawano , Rikio Tomiyoshi
- Applicant: Hidemitsu Naya , Koji Hashimoto , Masamichi Kawano , Rikio Tomiyoshi
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Hogan & Hartson, LLP
- Priority: JP2002-241294 20020822
- Main IPC: G03F1/84
- IPC: G03F1/84 ; G03F1/86 ; G03F7/20 ; H01J37/302 ; H01J37/317 ; H01L21/02 ; H01L21/027 ; G06F19/00
Abstract:
A semiconductor manufacturing apparatus includes: a calculation unit having at least one computer for processing semiconductor design information; a control unit for controlling radiation of an electron in accordance with a processing result of the semiconductor design information; a writing unit for radiating an electron in accordance with instructions of the control unit; and at least one storage device. The semiconductor manufacturing apparatus permits a communication between the storage device, the calculation unit, the control unit, and the writing unit. The semiconductor manufacturing apparatus further includes a communication pass through which the storage device can be controlled.
Public/Granted literature
- US20040125355A1 Semiconductor manufacturing apparatus Public/Granted day:2004-07-01
Information query
