发明授权
US06944075B1 Variable column redundancy region boundaries in SRAM 失效
SRAM中的可变列冗余区域边界

Variable column redundancy region boundaries in SRAM
摘要:
A method of assigning bits to redundant regions for variable bit redundancy region boundaries in a compliable memory such as a 1-port SRAM is provided. Methods include allocating bits between the redundant regions in nearly equal proportions while minimizing the amount of chip real estate consumed by the memory. Methods also includes allocating bits in equal portions between redundant regions while occupying slightly more memory chip real estate. Methods also allocate bits into redundant regions with a simplified procedure which may or may not allocate bits into the redundant regions in equal proportions. All of the methods allow the total number of memory bits in the complied memory to be re-defined while maintaining the same allocation characteristics for each method. Accordingly, the methods allow efficient use of redundant memory bits while also conserving chip real estate or offering simplified allocation steps.
信息查询
0/0