发明授权
US06944090B2 Method and circuit for precise timing of signals in an embedded DRAM array 失效
用于嵌入式DRAM阵列中信号精确定时的方法和电路

Method and circuit for precise timing of signals in an embedded DRAM array
摘要:
A method and circuit for timing the start of a precharge period in an eDRAM. The circuit including: a delayed lock loop circuit for receiving a clock signal and generating a control signal for adjusting an internal delay of the clock signal; and means for generating a delayed clock signal in response to the control signal. The means for generating the delayed clock signal is a multiple stage delay circuit, each stage of the multiple delay stage circuit connected in series and each stage individually responsive to the control signal.
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