发明授权
- 专利标题： Negative resist process with simultaneous development and aromatization of resist structures
- 专利标题（中）： 抗蚀剂工艺与抗蚀剂结构同时发展和芳构化
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申请号： US10186648申请日： 2002-07-01
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公开(公告)号： US06946236B2公开(公告)日： 2005-09-20
- 发明人: Jörg Rottstegge , Eberhard Kühn , Christian Eschbaumer , Gertrud Falk , Michael Sebald
- 申请人： Jörg Rottstegge , Eberhard Kühn , Christian Eschbaumer , Gertrud Falk , Michael Sebald
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- 优先权： DE10131487 20010629
- 主分类号： G03F7/32
- IPC分类号： G03F7/32 ; G03F7/40 ; G03F7/20 ; G03F7/004 ; G03F7/30 ; G03F7/38
摘要：
The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents include compounds having not only a reactive group for attachment to an anchor group of the polymer, but also at least one aromatic group.
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