发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US10630641申请日: 2003-07-29
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公开(公告)号: US06947322B2公开(公告)日: 2005-09-20
- 发明人: Shinsuke Anzai , Yasumichi Mori , Hidehiko Tanaka
- 申请人: Shinsuke Anzai , Yasumichi Mori , Hidehiko Tanaka
- 申请人地址: JP Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka
- 代理机构: Morrison & Foerster LLP
- 优先权: JP2002-221145 20020730; JP2003-148335 20030526
- 主分类号: G06F12/16
- IPC分类号: G06F12/16 ; G11C11/56 ; G11C16/00 ; G11C16/02 ; G11C16/06 ; G11C16/28 ; G11C29/00 ; G11C29/04 ; G11C16/04
摘要:
A semiconductor memory device is provided, which comprising a memory cell array comprising a two-value memory region and a multi-value memory region, in which the two-value memory region comprises a plurality of memory cells each storing 1-bit data and the multi-value memory region comprises a plurality of memory cells each storing 2 or more-bit data, and a sense amplifier section common to data read of the two-value memory region and data read of the multi-value memory region, for reading data stored in a selected memory cell by comparing a potential of the selected memory cell with a reference potential.
公开/授权文献
- US20040114430A1 Semiconductor memory device 公开/授权日:2004-06-17