- 专利标题： Method of patterning damascene structure in integrated circuit design
-
申请号： US10704022申请日： 2003-11-07
-
公开(公告)号： US06949459B2公开(公告)日： 2005-09-27
- 发明人: Wai-Kin Li , Chih-Chao Yang , Yi-hsiung Lin
- 申请人： Wai-Kin Li , Chih-Chao Yang , Yi-hsiung Lin
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn & Gibb, PLLC
- 代理商 Todd M.C. Li, Esq.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/311 ; H01L21/461 ; H01L21/4763 ; H01L21/768
摘要：
Disclosed is a method that deposits an aqueous material having a pH between approximately 10 and 11 in a first opening and on an oxide hard mask, deposits an organic material on the aqueous material, and patterns a photoresist over the organic material. The invention then etches the organic material and the aqueous material through the photoresist to form a second opening above the first opening and forms a polymer along sidewalls of the second opening. The invention can then perform a wet cleaning process using an alkali solution having a pH between approximately 10 and 11 to remove the aqueous material from the first opening. By utilizing an alkali aqueous (water-based) material having a pH of approximately 10-11, the invention can use a fairly low pH wet etch (pH of approximately 10-11) to completely remove the aqueous solution from the via, thereby eliminating the conventional problem of having residual organic material left within the via.