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US06950341B2 Semiconductor memory device having plural sense amplifiers 有权
具有多个读出放大器的半导体存储器件

Semiconductor memory device having plural sense amplifiers
摘要:
A semiconductor memory device is disclosed which includes an array of memory cells for storing data depending on whether current pull-in is present or absent or alternatively whether it is large or small, a plurality of sense lines with read data of the memory cell array transferred thereto, a reference sense line for common use in data sensing at the plurality of sense lines while being given a reference voltage for the data sense, and a sense amplifier array having a plurality of sense amplifiers for amplifying a difference voltage between the plurality of sense lines and the reference sense line to thereby determine read data.
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