发明授权
- 专利标题: Semiconductor memory device having plural sense amplifiers
- 专利标题(中): 具有多个读出放大器的半导体存储器件
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申请号: US10119840申请日: 2002-04-11
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公开(公告)号: US06950341B2公开(公告)日: 2005-09-27
- 发明人: Yoshinori Takano , Kentaro Watanabe
- 申请人: Yoshinori Takano , Kentaro Watanabe
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2001-172855 20010607; JP2001-172856 20010607
- 主分类号: G11C7/06
- IPC分类号: G11C7/06 ; G11C16/28 ; G11C16/06 ; G11C7/00
摘要:
A semiconductor memory device is disclosed which includes an array of memory cells for storing data depending on whether current pull-in is present or absent or alternatively whether it is large or small, a plurality of sense lines with read data of the memory cell array transferred thereto, a reference sense line for common use in data sensing at the plurality of sense lines while being given a reference voltage for the data sense, and a sense amplifier array having a plurality of sense amplifiers for amplifying a difference voltage between the plurality of sense lines and the reference sense line to thereby determine read data.
公开/授权文献
- US20020186593A1 Semiconductor memory device 公开/授权日:2002-12-12
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