发明授权
- 专利标题: Methods and systems for resistivity anisotropy formation analysis
- 专利标题(中): 电阻率各向异性形成分析的方法和系统
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申请号: US10604492申请日: 2003-07-25
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公开(公告)号: US06950748B2公开(公告)日: 2005-09-27
- 发明人: Cheng Bing Liu , Qiming Li , Frank P. Shray , Jacques Tabanou
- 申请人: Cheng Bing Liu , Qiming Li , Frank P. Shray , Jacques Tabanou
- 申请人地址: US TX Sugar Land
- 专利权人: Schlumberger Technology Corporation
- 当前专利权人: Schlumberger Technology Corporation
- 当前专利权人地址: US TX Sugar Land
- 代理商 Victor H. Segura; Brigitte L. Echols
- 主分类号: G01V3/20
- IPC分类号: G01V3/20 ; G01V3/38
摘要:
Techniques for determining a formation property by simplifying various two-geological-layer or multi-geological-layer models into a multi-electrical-layer model. A volume fraction of a layer in a multi-electrical-layer model is determined for an anisotropic region (sliding window) of the formation. The multi-electrical-layer electrical model includes a relative-lower-resistivity layer and a relative-higher-resistivity layer. A high-resolution resistivity measurement is used in the determination and resistivities for the relative-lower-resistivity layer and for the relative-higher-resistivity layer based on the volume fraction and bulk resistivity measure ments of the anisotropic region are determined. The formation property is based on the volume fraction, the resistivity of the relative-lower-resistivity layer, the resistivity of the relative-higher-resistivity layer, a total porosity of the anisotropic region, and bulk resistivity measurements of the region.
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