发明授权
- 专利标题: Electrically isolated pillars in active devices
- 专利标题(中): 有源器件中电隔离柱
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申请号: US10185507申请日: 2002-06-27
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公开(公告)号: US06952043B2公开(公告)日: 2005-10-04
- 发明人: Michael A. Vyvoda , Manish Bhatia , James M. Cleeves , N. Johan Knall
- 申请人: Michael A. Vyvoda , Manish Bhatia , James M. Cleeves , N. Johan Knall
- 申请人地址: US CA Santa Clara
- 专利权人: Matrix Semiconductor, Inc.
- 当前专利权人: Matrix Semiconductor, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: H01L27/102
- IPC分类号: H01L27/102 ; H01L29/06 ; H01L29/868
摘要:
A method of forming an active device is provided. The method includes performing a first patterning operation on a first plurality of layers. This first patterning operation defines a first feature of the active device. Then, a second patterning operation can be performed on at least one layer of the first plurality of layers. This second patterning operation defines a second feature of the active device. Of importance, the first and second patterning operations are performed substantially back-to-back, thereby ensuring that the active device can accurately function.
公开/授权文献
- US20040002186A1 ELECTRICALLY ISOLATED PILLARS IN ACTIVE DEVICES 公开/授权日:2004-01-01
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