- Patent Title: Interferometric modulation pixels and manufacturing method thereof
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Application No.: US10815947Application Date: 2004-04-02
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Publication No.: US06952303B2Publication Date: 2005-10-04
- Inventor: Wen-Jian Lin , Hsiung-Kuang Tsai
- Applicant: Wen-Jian Lin , Hsiung-Kuang Tsai
- Applicant Address: TW Hsinchu
- Assignee: Prime View International Co., LTD
- Current Assignee: Prime View International Co., LTD
- Current Assignee Address: TW Hsinchu
- Agency: Baker & Hostetler LLP
- Priority: TW92124032A 20030829
- Main IPC: G02B26/00
- IPC: G02B26/00 ; G02F1/1335 ; G02F1/21

Abstract:
A protection layer covers the cavity-side surface of a bottom electrode of a interferometric modulation pixel. Consequently, the protective layer protects the surface of the bottom electrode while a sacrificial layer between the bottom electrode and the top electrode is being etched. Thus, the distance between the bottom electrode and the top electrode is maintained, thereby ensuring that only the light with desired wavelengths is reflected by the interferometric modulation pixel.
Public/Granted literature
- US20050046923A1 Interferometric modulation pixels and manufacturing method thereof Public/Granted day:2005-03-03
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