A memory cell sensing circuit to sense data from a memory cell includes a reference memory cell coupled to pass a reference current. A sense amplifier has a first input and a second input coupled to a bias circuit of the data memory cell. A first mirror mirrors the reference current to a voltage coupled to the first input of the sense amplifier. A second mirror mirrors the reference current to a voltage coupled to the bias circuit of the data memory cell. A third mirror mirrors the reference current to a voltage coupled to the second input of the sense amplifier through a pass gate.