发明授权
- 专利标题: Methods of fabricating integrated circuit devices having trench isolation structures
- 专利标题(中): 制造具有沟槽隔离结构的集成电路器件的方法
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申请号: US10457910申请日: 2003-06-10
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公开(公告)号: US06955972B2公开(公告)日: 2005-10-18
- 发明人: Jae-Kyu Lee , Sang-Hyeon Lee
- 申请人: Jae-Kyu Lee , Sang-Hyeon Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR2000-72091 20001130
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/74 ; H01L21/762 ; H01L21/763 ; H01L21/8242 ; H01L27/108
摘要:
Methods of fabricating integrated circuit devices include forming a trench in a face of an integrated circuit substrate. The trench has a trench sidewall and a trench floor. The method further including forming a first insulating layer on the trench sidewall that exposes at least part of the trench floor and forming a conductive plug in the trench on the trench floor. The conductive plug is electrically connected to the substrate at the trench floor through the trench sidewall that exposes the at least part of the trench floor. The conductive plug also has a plug top opposite the trench floor that is recessed beneath the face of the substrate. The method further includes forming a second insulating layer on the plug top.