Invention Grant
US06958290B2 Method and apparatus for improving adhesion between layers in integrated devices
有权
用于改善集成装置中的层之间的附着力的方法和装置
- Patent Title: Method and apparatus for improving adhesion between layers in integrated devices
- Patent Title (中): 用于改善集成装置中的层之间的附着力的方法和装置
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Application No.: US10138393Application Date: 2002-05-03
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Publication No.: US06958290B2Publication Date: 2005-10-25
- Inventor: Richard A. Faust, Jr. , Qing-Tang Jiang , Jiong-Ping Lu
- Applicant: Richard A. Faust, Jr. , Qing-Tang Jiang , Jiong-Ping Lu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/768 ; H01L23/532 ; H01L21/4763 ; H01L21/44
Abstract:
In an integrated device, a via is formed in a substrate layer and a barrier layer is formed on the substrate layer in the via. A seed layer is formed on the barrier layer in the via. The seed layer includes a first material and a second material. The first material provides an ability for the second material to maintain an adherence to the barrier layer.
Public/Granted literature
- US20030207562A1 Method and apparatus for improving adhesion between layers in integrated devices Public/Granted day:2003-11-06
Information query
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