发明授权
- 专利标题： Memory cell strings
- 专利标题（中）： 记忆单元格串
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申请号： US10784514申请日： 2004-02-23
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公开(公告)号： US06958933B2公开(公告)日： 2005-10-25
- 发明人: Kenneth K. Smith , Corbin L. Champion , Stewart R. Wyatt , Frederick A. Perner
- 申请人： Kenneth K. Smith , Corbin L. Champion , Stewart R. Wyatt , Frederick A. Perner
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/14
摘要：
A data storage device comprising a first memory cell string that includes at least a first magnetic random access memory (MRAM) cell coupled to a second MRAM cell and a circuit coupled to a node between the first MRAM cell and the second MRAM cell is provided. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and in response to a write sense current being applied across the first MRAM cell.
公开/授权文献
- US20050007816A1 Memory cell strings 公开/授权日：2005-01-13
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