发明授权
- 专利标题: Film formation method, semiconductor element and method thereof, and method of manufacturing a disk-shaped storage medium
- 专利标题(中): 成膜方法,半导体元件及其制造方法以及盘状存储介质的制造方法
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申请号: US09842403申请日: 2001-04-26
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公开(公告)号: US06960540B2公开(公告)日: 2005-11-01
- 发明人: Shinichi Ito , Katsuya Okumura
- 申请人: Shinichi Ito , Katsuya Okumura
- 申请人地址: JP Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Kawasaki
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2000-127953 20000427; JP2000-311124 20001011
- 主分类号: B05D1/00
- IPC分类号: B05D1/00 ; G03F7/16 ; G11B5/842 ; G11B7/26 ; H01L21/027 ; H01L21/312 ; H01L21/316 ; H01L21/30
摘要:
Relative movement occurs between the in-process substrate and the dropping section. While the substrate is rotated, the dropping section is relatively moved from an approximate center of the substrate toward an outer periphery thereof. While the dropping section relatively moves from the approximate center of the in-process substrate toward the outer periphery, the rotational frequency w for the substrate is decreased so that the solution film should not move due to the centrifugal force applied to a dropped solution film. Concurrently, feed rate v for the liquid from the dropping section is increased to form a solution film on the in-process substrate.