发明授权
- 专利标题： Ceramic substrate for semiconductor manufacturing, and method of manufacturing the ceramic substrate
- 专利标题（中）： 用于半导体制造的陶瓷基板以及陶瓷基板的制造方法
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申请号： US10398393申请日： 2001-12-05
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公开(公告)号： US06960743B2公开(公告)日： 2005-11-01
- 发明人: Yasuji Hiramatsu , Yasutaka Ito
- 申请人： Yasuji Hiramatsu , Yasutaka Ito
- 申请人地址： unknown Ogaki
- 专利权人： Ibiden Co., Ltd.
- 当前专利权人： Ibiden Co., Ltd.
- 当前专利权人地址： unknown Ogaki
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2000-370452 20001205
- 国际申请： PCT/JP01/10651 WO 20011205
- 国际公布： WO02/47129 WO 20020613
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/68 ; H01L21/687 ; H05B3/14 ; H05B3/68
摘要：
A ceramic substrate for a semiconductor-producing/examining device, in which it is possible to promptly raise its temperature, a heating face thereof has a small temperature variation, and no semiconductor wafer and the like is damaged or distorted by thermal impact. The ceramic substrate for a semiconductor-producing/examining device has a resistance heating element formed on a surface thereof or inside thereof, wherein a projected portion for fitting a semiconductor wafer is formed along the periphery thereof and a large number of convex bodies, which make contact with the semiconductor wafer, are formed inside the projected portion.
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