发明授权
- 专利标题: Liquid crystal display device having polycrystalline TFT and fabricating method thereof
- 专利标题(中): 具有多晶TFT的液晶显示装置及其制造方法
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申请号: US10663765申请日: 2003-09-17
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公开(公告)号: US06963083B2公开(公告)日: 2005-11-08
- 发明人: Dae Hyun Nam
- 申请人: Dae Hyun Nam
- 申请人地址: KR Seoul
- 专利权人: LG.Philips LCD Co., Ltd.
- 当前专利权人: LG.Philips LCD Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: Morgan, Lewis & Bockius LLP
- 优先权: KR10-2003-0043989 20030630
- 主分类号: G02F1/136
- IPC分类号: G02F1/136 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/423 ; H01L29/786 ; H01L29/04 ; H01L31/20 ; H01L31/36 ; H01L31/376 ; H01L29/76 ; H01L31/62 ; H01L31/113
摘要:
A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.