发明授权
- 专利标题： Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof
- 专利标题（中）： 包含镧和硼的肖特基电极的假晶高电子迁移率晶体管及其制造方法
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申请号： US10617793申请日： 2003-07-14
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公开(公告)号： US06967360B2公开(公告)日： 2005-11-22
- 发明人: Yoshiharu Anda , Akiyoshi Tamura
- 申请人： Yoshiharu Anda , Akiyoshi Tamura
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Wendertoh, Lind & Ponack, L. L. P.
- 优先权： JP2003-031214 20030207
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/335 ; H01L21/338 ; H01L29/423 ; H01L29/47 ; H01L29/778 ; H01L29/812 ; H01L29/872 ; H01L31/0328
摘要：
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310, a GaAs buffer layer 321 that is formed on the semi-insulating GaAs substrate 310, AlGaAs buffer layer 322, a channel layer 323, a spacer layer 324, a carrier supply layer 325, a spacer layer 326, a Schottky layer 327 composed of an undoped In0.48Ga0.52P material, and an n+-type GaAs cap layer 328. A gate electrode 330 is formed on the Schottky layer 327, and is composed of LaB6 and has a Schottky contact with the Schottky layer 327, and ohmic electrodes 340 are formed on the n+-type GaAs cap layer 328.
公开/授权文献
- US20040155261A1 Semiconductor device and manufacturing method thereof 公开/授权日：2004-08-12