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US06974962B2 Lateral shift measurement using an optical technique 有权
使用光学技术的侧向位移测量

Lateral shift measurement using an optical technique
Abstract:
The method for controlling layers alignment in a multi-layer sample (10), such a semiconductors wafer based on detecting a diffraction efficiency of radiation diffracted from the patterned structures (12, 14) located one above the other in two different layers of the sample.
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