发明授权
- 专利标题： Aluminum-filled via structure with barrier layer
- 专利标题（中）： 带有阻挡层的铝填充通孔结构
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申请号： US10308410申请日： 2002-12-03
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公开(公告)号： US06977217B1公开(公告)日： 2005-12-20
- 发明人: Mira Ben-Tzur , Gorley L. Lau , Ivan P. Ivanov , Feng Dai , Chan-Lon Yang
- 申请人： Mira Ben-Tzur , Gorley L. Lau , Ivan P. Ivanov , Feng Dai , Chan-Lon Yang
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Okamoto & Benedicto LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/4763 ; H01L21/768
摘要：
In one embodiment, a via structure includes a liner, a barrier layer over the liner, and an aluminum layer over the barrier layer. The barrier layer helps minimize reaction between the aluminum layer and the liner, thus helping minimize void formation in the via. The liner and the barrier layer may be deposited in-situ by ionized metal plasma (IMP) physical vapor deposition (PVD). In one embodiment, the liner comprises titanium, while the barrier layer comprises titanium nitride.
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