发明授权
- 专利标题: Copper interconnects with metal capping layer and selective copper alloys
- 专利标题(中): 铜互连与金属覆盖层和选择性铜合金
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申请号: US10704595申请日: 2003-11-12
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公开(公告)号: US06979625B1公开(公告)日: 2005-12-27
- 发明人: Christy Mei-Chu Woo , Connie Pin-Chin Wang , Darrell M. Erb
- 申请人: Christy Mei-Chu Woo , Connie Pin-Chin Wang , Darrell M. Erb
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: H01L21/3213
- IPC分类号: H01L21/3213 ; H01L21/331 ; H01L21/768 ; H01L23/532
摘要:
High reliable copper interconnects are formed with copper or a low resistivity copper alloy filling relatively narrow openings and partially filling relatively wider openings and a copper alloy having improved electromigration resistance selectively deposited in the relatively wider openings. The filled openings are recessed and a metal capping layer deposited followed by CMP. The metal capping layer prevents diffusion along the copper-capping layer interface while the copper alloy filling the relatively wider openings impedes electromigration along the grain boundaries.