发明授权
US06979648B2 Method for BARC over-etch time adjust with real-time process feedback
有权
BARC过蚀刻时间的方法用实时过程反馈调整
- 专利标题： Method for BARC over-etch time adjust with real-time process feedback
- 专利标题（中）： BARC过蚀刻时间的方法用实时过程反馈调整
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申请号： US10460584申请日： 2003-06-11
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公开(公告)号： US06979648B2公开(公告)日： 2005-12-27
- 发明人: James B. Friedmann , Christopher C. Baum
- 申请人： James B. Friedmann , Christopher C. Baum
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; G03C5/18 ; G06F17/50 ; H01L21/00 ; H01L21/027 ; H01L21/28 ; H01L21/302 ; H01L21/3213 ; H01L21/461 ; H01L21/4763 ; H01L21/66 ; H01L21/768 ; H01L23/00
摘要：
A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresist of the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlot is found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).
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