Invention Grant
US06979648B2 Method for BARC over-etch time adjust with real-time process feedback
有权
BARC过蚀刻时间的方法用实时过程反馈调整
- Patent Title: Method for BARC over-etch time adjust with real-time process feedback
- Patent Title (中): BARC过蚀刻时间的方法用实时过程反馈调整
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Application No.: US10460584Application Date: 2003-06-11
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Publication No.: US06979648B2Publication Date: 2005-12-27
- Inventor: James B. Friedmann , Christopher C. Baum
- Applicant: James B. Friedmann , Christopher C. Baum
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G03C5/18 ; G06F17/50 ; H01L21/00 ; H01L21/027 ; H01L21/28 ; H01L21/302 ; H01L21/3213 ; H01L21/461 ; H01L21/4763 ; H01L21/66 ; H01L21/768 ; H01L23/00
Abstract:
A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresist of the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlot is found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).
Public/Granted literature
- US20040253812A1 Method for BARC over-etch time adjust with real-time process feedback Public/Granted day:2004-12-16
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