发明授权
- 专利标题: Pattern inspection method and inspection apparatus
- 专利标题(中): 图案检验方法及检验仪器
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申请号: US10067572申请日: 2002-02-04
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公开(公告)号: US06980686B2公开(公告)日: 2005-12-27
- 发明人: Masayuki Kuwabara
- 申请人: Masayuki Kuwabara
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Seimitsu Co., Ltd.
- 当前专利权人: Tokyo Seimitsu Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Christie, Parker and Hale, LLP
- 优先权: JP2001-280141 20010914
- 主分类号: G01N21/956
- IPC分类号: G01N21/956 ; G06T1/00 ; G06T7/00 ; H01L21/027 ; H01L21/66 ; G06K9/00
摘要:
A pattern inspection method and a pattern inspection apparatus, which are able to detect a killer defect as a defect candidate and also reduce considerably the number of non-killer defects detected as a defect candidate, have been disclosed, wherein a differential image of two patterns to be compared is calculated, with the polarities included, and after the absolute value of the differential image is compared with a first threshold value to detect the part as a defect candidate, the polarities of the differential image of the part of the defect candidate are inspected and the part of one of the polarities is judged as a defect candidate.
公开/授权文献
- US20030053675A1 Pattern inspection method and inspection apparatus 公开/授权日:2003-03-20