发明授权
- 专利标题: High isolation/high speed buffer amplifier
- 专利标题(中): 高隔离/高速缓冲放大器
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申请号: US10969519申请日: 2004-10-20
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公开(公告)号: US06982601B2公开(公告)日: 2006-01-03
- 发明人: Andreas Sibrai
- 申请人: Andreas Sibrai
- 申请人地址: DE Kirchheim/Teck-Nabern
- 专利权人: Dialog Semiconductor GmbH
- 当前专利权人: Dialog Semiconductor GmbH
- 当前专利权人地址: DE Kirchheim/Teck-Nabern
- 代理商 George O. Saile; Stephen B. Ackerman
- 优先权: EP02392018 20021107
- 主分类号: H03F3/04
- IPC分类号: H03F3/04
摘要:
A method and circuits of a high isolation and high-speed buffer amplifier capable to handle frequencies in the GHz range have been achieved. The output to input isolation is primary dependent on the gate-source capacitance of the active buffer transistor. Having two or more in series and by reducing the impedance between them a high isolation can be achieved. The input signals are split in several signal paths and are amplified in the push-pull mode using source follower amplifiers. Then the amplified signals are being combined again. The amplified output current is mirrored applying a multiplication factor. Said method and technology can be used for buffer amplifiers having differential input and differential output or having single input and single output or having differential input and single output. A high reversed biased (output to input) isolation and a reduced quiescent current have been achieved.
公开/授权文献
- US20050052240A1 High isolation/high speed buffer amplifier 公开/授权日:2005-03-10
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