Invention Grant
US06984535B2 Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
失效
选择性蚀刻保护层以形成用于电子发射器件的催化剂层
- Patent Title: Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
- Patent Title (中): 选择性蚀刻保护层以形成用于电子发射器件的催化剂层
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Application No.: US10327529Application Date: 2002-12-20
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Publication No.: US06984535B2Publication Date: 2006-01-10
- Inventor: Jong Woo Son , Chul Ha Chang , Jung-Jae Kim , Koji Suzuki , Takashi Kuwahara
- Applicant: Jong Woo Son , Chul Ha Chang , Jung-Jae Kim , Koji Suzuki , Takashi Kuwahara
- Applicant Address: US CA San Jose
- Assignee: cDream Corporation
- Current Assignee: cDream Corporation
- Current Assignee Address: US CA San Jose
- Agency: Fenwick & West LLP
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
An electron-emitting device including a protective layer that is formed on a catalyst layer to protect the catalyst layer from the deleterious environmental conditions before or during a cathode process. The present invention further includes a half etching process that is adapted to partially remove portions of the protective layer from the catalyst layer to etch the catalyst layer except carbon nano-tube growing portions. Portions of the protective layer still remain on the catalyst layer to protect the catalyst layer from the deleterious conditions from next cathode formation process.
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