Invention Grant
- Patent Title: Compositions for oxide CMP
- Patent Title (中): 氧化物CMP的组成
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Application No.: US10694408Application Date: 2003-10-27
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Publication No.: US06984588B2Publication Date: 2006-01-10
- Inventor: Gautam S. Grover , Brian L. Mueller , Shumin Wang
- Applicant: Gautam S. Grover , Brian L. Mueller , Shumin Wang
- Applicant Address: US IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: US IL Aurora
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.
Public/Granted literature
- US20040089634A1 Compositions for oxide CMP Public/Granted day:2004-05-13
Information query
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