发明授权
US06984840B2 Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element
有权
具有含有N作为V族元素的III-V族化合物半导体材料外延层的光学半导体器件
- 专利标题： Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element
- 专利标题（中）： 具有含有N作为V族元素的III-V族化合物半导体材料外延层的光学半导体器件
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申请号： US09313764申请日： 1999-05-18
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公开(公告)号： US06984840B2公开(公告)日： 2006-01-10
- 发明人: Akito Kuramata , Shinichi Kubota , Kazuhiko Horino , Reiko Soejima
- 申请人： Akito Kuramata , Shinichi Kubota , Kazuhiko Horino , Reiko Soejima
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP10-135425 19980518; JP10-353241 19981211
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition represented as AlxGa1-xN, wherein the AlGaN buffer layer has a carrier density in the range between 3×1018–1×1020 cm−3, and the compositional parameter x is larger than 0 but smaller than 0.4 (0
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