A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch Δ a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller: Δa/a=(ad−ae)/ae where ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure.