发明授权
- 专利标题: Magnetic random access memory
- 专利标题(中): 磁性随机存取存储器
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申请号: US10847384申请日: 2004-05-18
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公开(公告)号: US06984865B2公开(公告)日: 2006-01-10
- 发明人: Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
- 申请人: Takeshi Kajiyama , Tomomasa Ueda , Tatsuya Kishi , Hisanori Aikawa , Masatoshi Yoshikawa , Yoshiaki Asao , Hiroaki Yoda
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2004-071390 20040312
- 主分类号: H01L29/82
- IPC分类号: H01L29/82
摘要:
A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.
公开/授权文献
- US20050199925A1 Magnetic random access memory 公开/授权日:2005-09-15
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