发明授权
US06985381B2 System and method for reading magnetization orientation of MRAM cells
有权
用于读取MRAM单元的磁化方向的系统和方法
- 专利标题： System and method for reading magnetization orientation of MRAM cells
- 专利标题（中）： 用于读取MRAM单元的磁化方向的系统和方法
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申请号： US10686271申请日： 2003-10-15
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公开(公告)号： US06985381B2公开(公告)日： 2006-01-10
- 发明人: Manoi K. Bhattacharyya , Thomas C. Anthony , Anthony P. Holden
- 申请人： Manoi K. Bhattacharyya , Thomas C. Anthony , Anthony P. Holden
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A method for reading the magnetization orientation of a memory cell includes applying a magnetic field to the memory cell, observing any change in resistance of the memory cell as the magnetic field is applied, and determining the magnetization orientation based upon the observed change in resistance of the memory cell.
公开/授权文献
- US20050083733A1 Method for reading memory cells 公开/授权日：2005-04-21
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